The design, fabrication, and characterization of a novel electrode structure self-aligned HBT with a cutoff frequency of 45 GHz
- 1 July 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (7) , 1419-1428
- https://doi.org/10.1109/t-ed.1987.23102
Abstract
This paper establishes a systematic approach for the design, fabrication, and modeling of a newly proposed self, aligned Al-GaAs/GaAs heterojunction bipolar transistor (HBT) employing a two-dimensional heterostructure device simulator and a heterojunction bi-polar transistor circuit simulator. The developed HBT has an abrupt emitter-base heterojunction, and applies a novel structure in which a single base electrode is placed between two emitter electrodes. A fabricated 3 × 8 µm2two-emitter HBT exhibits a measured current gain cutoff frequency fT= 45 GHz and a maximum oscillation frequency fmax= 18.5 GHz. Results of frequency divider circuit Simulation indicate that the developed HBT would be 1.4 times faster than a conventional HBT in which one emitter electrode is located between two base electrodes.Keywords
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