Deuterium bonding at internal surfaces in silicon
- 15 February 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (7) , 3914-3917
- https://doi.org/10.1103/physrevb.45.3914
Abstract
The strength of deuterium bonding to the walls of closed cavities within Si was determined in ion-beam experiments. These studies circumvented an inherent indeterminacy in the analysis of external-surface desorption and thereby achieved a quantitative characterization of Si-H surface bonding. The Si-D bond energy for submonolayer coverages is 2.5±0.2 eV. This value has implications for the reaction path of molecular desorption.Keywords
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