Relaxation Processes in Si / Si1 − x Ge x Strained Layer Superlattices: A Study by Raman Spectroscopy and X‐Ray Diffractometry
- 1 December 1989
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 136 (12) , 3848-3852
- https://doi.org/10.1149/1.2096560
Abstract
A series of superlattice structures have been studied by Raman spectroscopy and x‐ray diffractometry. The periodicity of the superlattices, the alloy composition, and the degree of relaxation have been measured. The degree of relaxation as a function of thickness for superlattices was found to be less than that for single layers. This effect has been discussed in terms of the alternating strain fields in the relaxed superlattice and related to the mechanism of the relaxation process.Keywords
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