Photoluminescence of heavily doped n-type AlxGa1−x As in the indirect energy gap region

1 September 1981

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 39 (5) , 428-430
https://doi.org/10.1063/1.92761

Abstract

Three peaks were found in the photoluminescence spectrum of Te‐doped Al_xGa_1−xAs with x≃0.52 in the indirect energy gap region. A peak at the highest energy, which is higher than the indirect band‐gap energy, is caused by direct transition. The emission intensity of the peak depended on the resistivity of the sample and was at a maximum at about 0.1 Ω cm. This relation is similar to a recently reported anomalous relation of the Hall coefficient to the resistivity. The emission intensity of the peak increased with increasing temperature. These luminescence properties can be explained in terms of the enhancement of electron concentration in the Γ conduction band.

Keywords

This publication has 2 references indexed in Scilit:

An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_1-xAs
Japanese Journal of Applied Physics, 1981
Electron transport and band structure of ${Ga}_{1 - x} {Al}_{x} As$ alloys
Physical Review B, 1980