Growth of a (GaAs)n/(InAs)n Superlattice Semiconductor by Molecular Beam Epitaxy
- 1 September 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (9A) , L682-684
- https://doi.org/10.1143/jjap.24.l682
Abstract
Molecular beam epitaxial growth of (GaAs) n /(InAs) n superlattice semiconductors is reported. Reflection electron diffraction was used to monitor the growth process. Successful growth of (GaAs) n /(InAs) n (n=1, 2) on InP substrate was confirmed by X-ray diffraction.Keywords
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