High-pressure dependence of the room-temperature minority carrier lifetimes in GaAs
- 1 April 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (4) , 233-234
- https://doi.org/10.1088/0268-1242/4/4/009
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Time decays of donor-bound excitons in GaAs under pressure-inducedΓ-XcrossoverPhysical Review B, 1986
- Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy SystemJapanese Journal of Applied Physics, 1985
- Photoluminescence in heavily doped GaAs. II. Hydrostatic pressure dependencePhysical Review B, 1980