Influence of the interfacial layer on the properties of the Au/ZnSe Schottky barrier

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Abstract
The properties of the Au/ZnSe Schottky barrier have been investigated by J/U, C/ U and photoelectric measurements with considerate attention given to the influence of the interface. The behaviour of the capacitance of the diodes, investigated as a function of the frequency and the temperature, has been explained by assuming the presence of one set of surface states uniformly distributed within the forbidden energy gap. By the investigation of their frequency response a method for the valuation of the relaxation time is illustrate. The photoelectric determination of the image force dielectric constant is in agreement with the presence of a ZnO layer at the interface. Finally, an electroluminescent emission has been observed at low forward voltages with two characteristic peaks at 1.89 eV and 2.67 eV. They should be related to light emission by self-activation and donor acceptor recombination respectively