0.98 μm strained-layer GaInAs/GaInAsP/GaInP quantum well lasers
- 5 November 1992
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 28 (23) , 2171-2172
- https://doi.org/10.1049/el:19921393
Abstract
Strained-layer GaInAs/GaInAsP/GaInP separate-confine-ment-heterostructure multiquantum well lasers which emit at a wavelength of 0.98 μm are reported. These lasers exhibit a low threshold current density of 153 A /cm2 and high characteristic temperature up to 235 K. The internal waveguide loss and internal quantum efficiency are 5.0 cm−1 and 83% respectively. Single mode continuous wave operation is found up to an output power of 80mW at room temperature for an HR/AR coated 5.5 × 800μm2 ridge wave guide laser. wave guide laser.Keywords
This publication has 1 reference indexed in Scilit:
- High power CW operation of aluminium-free InGaAs/GaAs/InGaP strained layer single quantum well ridge waveguide lasersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990