ANOMALOUS ELECTRICAL PROPERTIES OF SOLUTION-GROWN, P-TYPE GaP
- 1 January 1969
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 14 (1) , 25-27
- https://doi.org/10.1063/1.1652643
Abstract
The hole concentration determined from Hall effect measurements on Zn‐doped, solution‐grown GaP was found to exceed the Zn concentration. It has not been established whether the effect is due to additional acceptor defects introduced simultaneously with the Zn, or to an anomalously small Hall mobility/drift mobility ratio.Keywords
This publication has 5 references indexed in Scilit:
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- Resistivities and Hole Mobilities in Very Heavily Doped GermaniumJournal of Applied Physics, 1958