Bipolar transistor action in cadmium mercury telluride
- 22 May 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (11) , 611-613
- https://doi.org/10.1049/el:19860416
Abstract
Bipolar transistor action has been observed in a cadmium mercury telluride, lateral collection npn device structure. The current gain β is strongly dependent on collector current. Values up to 100 and 58 have been observed at 80 K and 19 K, respectively.Keywords
This publication has 0 references indexed in Scilit: