Relation between barrier height and work function in contacts to selenium
- 15 May 1985
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (10) , 4823-4825
- https://doi.org/10.1063/1.335301
Abstract
In Se–Tl, Se–Cd, Se–Au, and Se–Te contacts prepared by evaporation on a crystallized selenium layer, Schottky barrier heights were measured from junction capacitance. These were found to decrease systematically with the work function of the contacting metal. From this variation, the density of interface states was estimated to be about 1014 cm−2 eV−1, assuming an interfacial layer thickness of 10 Å. The neutral level of the states was estimated to lie close to the valence band edge.This publication has 3 references indexed in Scilit:
- The electronic structure of chalcogenide solids: A photoemission study of ordered and disordered selenium and telluriumJournal of Physics C: Solid State Physics, 1974
- Photoelectric Work Functions of Transition, Rare-Earth, and Noble MetalsPhysical Review B, 1970
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965