Domain wall traps for low-field switching of submicron elements
- 1 May 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (9) , 7058-7060
- https://doi.org/10.1063/1.372930
Abstract
In magnetic random access memory, power consumption depends on the coercivity of the magnetic elements in the memory cells. In this article a new method is described that uses a “domain wall trap” element shape to reduce both the coercivity and the dependence of coercivity on element size in submicron magnetic elements. Micromagnetic simulations of a shaped permalloy element show coercivity less than one tenth the coercivity calculated for a rectangular permalloy element of the same size. The switching times for the domain wall traps are shown to be comparable to those of rectangular elements.This publication has 7 references indexed in Scilit:
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