Penetration depth ofSi
- 1 March 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 33 (5) , 3509-3511
- https://doi.org/10.1103/physrevb.33.3509
Abstract
The London-limit penetration depth, (T), has now been calculated as a function of temperature, T, for Si using two recent tunneling-derived spectra of the electron-phonon interaction. Significantly different predictions for (T)/(0) resulted from the two spectra. Comparison with recent experimental data revealed good agreement in one case, but not in the other.
Keywords
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