Low emitter resistance GaAs based HBT's without InGaAs caps
- 1 May 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (5) , 154-156
- https://doi.org/10.1109/55.291602
Abstract
Low emitter resistance is demonstrated for AlGaAs/GaAs heterojunction bipolar transistors using Pd/Ge contacts on a GaAs contact layer. The contact resistivity to 2-10/spl times/10/sup 18/ cm/sup -3/ n-type GaAs is 4-1/spl times/10/sup -7/ /spl Omega/-cm/sup 2/. These are comparable to contact resistivities obtained with non-alloyed contacts on InGaAs layers. The non-spiking Pd/Ge contact demonstrates thermal stability and area independent resistivity suitable for scaled devices. The substitution of Pd/Ge for AuGe/Ni GaAs emitter and collector contacts reduced by an order of magnitude the emitter-base offset voltage at high current densities and increased f/sub t/ by more than 15% with significantly improved uniformity for devices with 2 and 2.6 /spl mu/m wide emitters having lengths two, four and six times the width.Keywords
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