Organic field-effect transistors with single and double pentacene layers
- 16 February 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (8) , 083505
- https://doi.org/10.1063/1.1865331
Abstract
We report the characterization of field-effect transistors fabricated within individual grains of single and double pentacene layers grown on silicon oxide. Field-effect mobilities are found to increase with increasing gate voltage and exhibit a thermally activated form for the temperature dependence. These characteristics can be explained by the multiple trapping and release model. The mobilities of double-layer devices are one order of magnitude higher than those of single-layer devices. Possible origins of the traps are discussed. The geometry of these ultrathin devices makes them suitable for sensing applications.Keywords
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