Metastable SiGeC formation by solid phase epitaxy
- 15 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (20) , 2786-2788
- https://doi.org/10.1063/1.110334
Abstract
We report the synthesis and detailed structural characterization of SiGeC metastable alloys formed by solid phase epitaxial regrowth. Epitaxial layers with 0.7 and 1.4 at. % C are formed by 700 °C regrowth of multiple energy carbon implants into preamorphized Si0.86Ge0.14 layers on Si substrates. Transmission electron microscopy and Rutherford backscattering spectrometry show heteroepitaxial regrowth of Si1−x−yGexCy layers into the metastable diamond cubic phase. Fourier transform infrared spectroscopy verifies that the carbon occupies substitutional lattice sites. Double crystal x‐ray diffraction measurements of Si1−x−yGexCy and Si1−yCy reference layers quantify the C‐induced tensile strain component. This strain compensates for the compressive strain in the SiGe layers, and indicates a change in lattice constant per atomic fraction C in agreement with Vegard’s law.Keywords
This publication has 13 references indexed in Scilit:
- Reduction of secondary defect density by C and B implants in GexSi1−x layers formed by high dose Ge implantation in (100) SiApplied Physics Letters, 1993
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- Synthesis of Si1−yCy alloys by molecular beam epitaxyApplied Physics Letters, 1992
- Characterization of SiGe/Si heterostructures formed by Ge+ and C+ implantationApplied Physics Letters, 1990
- The growth of strained Si1−xGex alloys on 〈001〉 silicon using solid phase epitaxyJournal of Materials Research, 1990
- On the feasibility of growing dilute CxSi1−x epitaxial alloysApplied Physics Letters, 1990
- Critical Stresses forStrained-Layer PlasticityPhysical Review Letters, 1987
- Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor depositionApplied Physics Letters, 1986
- Resistance fluctuations in ohmic contacts due to discreteness of dopantsApplied Physics Letters, 1986
- The C−Si (Carbon-Silicon) systemBulletin of Alloy Phase Diagrams, 1984