Holding time degradation in dynamic MOS RAM by injection-induced electron currents

1 December 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 28 (12) , 1515-1519
https://doi.org/10.1109/T-ED.1981.20639

Abstract

The holding time degradation of a dynamic MOS RAM caused by a peripheral MOS device operated in the saturation region is discussed. It is shown that the process taking place is injection of electrons into a positively biased substrate region from a grounded junction. This junction becomes forward biased due to the resistive potential drop on the substrate caused by the high substrate current of the short-channel MOS device operated in the saturation region. The model presented in the literature of secondary-impact ionization of holes in the depletion-region edge being responsible for the degradation phenomenon is shown to be inconsistent with experimental results and theoretically improbable.

Keywords

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