Identification of the Γ5 and Γ6 free excitons in GaN
- 24 October 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (18) , 2879-2881
- https://doi.org/10.1063/1.1322054
Abstract
The and free excitons have been identified in GaN from emission measurements. Another emission peak is also observed which we believe to be the longitudinal free exciton. These measurements along with electrical measurements, which show the sample to have very high peak mobility, attest to the high quality of the sample.
Keywords
This publication has 8 references indexed in Scilit:
- Strain splitting of the Γ5 and Γ6 free excitons in ZnOJournal of Applied Physics, 1999
- GaN: Processing, defects, and devicesJournal of Applied Physics, 1999
- Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurementsApplied Physics Letters, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Solution for the Two-Electron Correlation Function in a PlasmaPhysical Review B, 1961
- Fine Structure and Magneto-Optic Effects in the Exciton Spectrum of Cadmium SulfidePhysical Review B, 1961