Heavy-Ion Track Structure in Silicon
- 1 December 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 26 (6) , 4892-4895
- https://doi.org/10.1109/tns.1979.4330246
Abstract
The energy deposition in the vicinity of a heavy ion path in silicon has been investigated by a Monte Carlo transport analysis of the delta rays produced along the track. The dose as a function of radial distance is presented for C, A1, and Fe ions with energies between 10 and 10,000 MeV. The average dose in cylinders of radii between 10-3 and 1 μm as a function of the distance of the cylinder from the path is also presented.Keywords
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