Evaluation of Trace Impurities in the Preparation of High-Purity Silicon Carbide
- 1 January 1966
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 113 (11) , 1215-1218
- https://doi.org/10.1149/1.3087208
Abstract
Silicon carbide single crystals of high purity have been prepared using a closed cavity sublimation technique. Trace concentrations of compensating acceptor impurities were diminished by high‐temperature degassing of the charge before sublimation. Crystals prepared in this manner were n‐type with an excess donor concentration of about 1017 cm−3. In the purest crystals the electron mobility was near 500 cm2/v sec at room temperature, reaching a peak value of about 1750 cm2/v sec at 92°K.Keywords
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