Memory switching in GeO2films
- 1 February 1979
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 46 (2) , 215-216
- https://doi.org/10.1080/00207217908900988
Abstract
A range of specimens in the form of thin film sandwishof AI-GeO2-AI(dielectric thickness 400–1500 Å) and Cu-Geo2-Cu (dielectric thickness 2000 Å) is shown to exhibit memory switching at an applied voltage of order IIV.Keywords
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- Low-Frequency Negative Resistance in Thin Anodic Oxide FilmsJournal of Applied Physics, 1962