On the nanometer-scale solid-state reactions at thin-film Ni/amorphous SiC and Co/amorphous SiC interfaces
- 15 July 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (2) , 811-820
- https://doi.org/10.1063/1.349639
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Interfacial reactions in Ti/SiC layered films with and without thin diffusion barriersMaterials Science and Engineering: A, 1990
- Fractal-like Si crystallization during interfacial reactions in thin Al/amorphous SiC layersJournal of Applied Physics, 1990
- Formation of the Ni-SiC(001) interface studied by high-resolution ion backscatteringJournal of Applied Physics, 1989
- Interfacial reactions in metal matrix composites studied with a novel techniqueJournal of Materials Science Letters, 1989
- Electronic structure and thermal stability of Ni/SiC(100) interfacesJournal of Vacuum Science & Technology B, 1988
- Solid phase reactions in free-standing layered M-Si (M=Ti, V, Cr, Co) filmsJournal of Applied Physics, 1988
- Reactions between α‐Silicon Carbide Ceramic and Nickel or IronJournal of the American Ceramic Society, 1988
- Investigation of thin-film Ni/single-crystal SiC interface reactionJournal of Applied Physics, 1987
- X-ray diffraction and ion backscattering study of thermally annealed Pd/SiC and Ni/SiCJournal of Applied Physics, 1985
- Solid state SiC/Ni alloy reactionMetallurgical Transactions A, 1983