Modeling the turn-off characteristics of the bipolar-MOS transistor
- 1 May 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (5) , 211-214
- https://doi.org/10.1109/EDL.1985.26101
Abstract
Since the turn-off speed of the new bipolar-MOS power transistor is slow compared to that of a MOSFET, it is important to understand the limiting mechanism and the prospect for future improvement. In this letter, it is demonstrated that the turnoff waveform can be explained by a model based on a simple equivalent circuit and the transistor open-base turn-off process. The model is applied to explore the impact of some process modifications on speed improvement and to study the tradeoff between speed and on-resistance.Keywords
This publication has 4 references indexed in Scilit:
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- The COMFET—A new high conductance MOS-gated deviceIEEE Electron Device Letters, 1983
- Improved COMFETs with fast switching speed and high-current capabilityPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- The insulated gate rectifier (IGR): A new power switching devicePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982