1.3 μm-wavelength mode controlled GaInAsP/InP etched laser
- 6 August 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (16) , 559-560
- https://doi.org/10.1049/el:19810392
Abstract
A mode controlled GaInAsP/InP (λ=1.3 μm) etched laser with a lens-like narrow strip waveguide along the direction has been fabricated. The minimum threshold current was 160 mA for 170 μm cavity length, and a single longitudinal mode operation has been obtained up to 1.3 times the threshold.Keywords
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