Empirical temperature dependence of the refractive index of semiconductors
- 15 May 1995
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (10) , 5476-5477
- https://doi.org/10.1063/1.359248
Abstract
Values of the temperature coefficient of the refractive index were obtained from the derivation of a simple relation between energy band‐gap and refractive index in semiconductors. These values, (dn/dT)/n, were compared to the experimental data found in literature. Our model, with only one fitting parameter dB/dT=2.5×10−5 K−1 for all semiconductors, results in the best agreement with experimental data.This publication has 9 references indexed in Scilit:
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