Effects of nitrogen annealing on electron scatterings in SiSiO2 interface
- 31 March 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (3) , 261-263
- https://doi.org/10.1016/0038-1101(79)90031-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Oxide thickness effects on electron scatterings at a thermally grown Si-SiO2 interfaceApplied Physics Letters, 1978
- The Current Understanding of Charges in the Thermally Oxidized Silicon StructureJournal of the Electrochemical Society, 1974
- The scattering of electrons by surface oxide charges and by lattice vibrations at the silicon-silicon dioxide interfaceSurface Science, 1972
- Transport Properties of Electrons in Inverted Silicon SurfacesPhysical Review B, 1968
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967