Gamma Total Dose Effects on ALS Bipolar Oxide Sidewall Isolated Devices
- 1 January 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 30 (6) , 4105-4109
- https://doi.org/10.1109/tns.1983.4333090
Abstract
Advances in bi-polar technology that increase device performance through the use of oxide sidewall isolation have revived concerns about total dose radiation effects. Extensive Cobalt 60 tests of Texas Instruments ALS devices were conducted and comparative results of "walled" and "nested" emitter devices are included. It was determined that inversion at the Si-SiO2 interface between the isolation oxide and residual EPI material was the source of IIH leakage. Controls were established to improve gamma total dose tolerance.Keywords
This publication has 1 reference indexed in Scilit:
- Total Dose Effects in Recessed Oxide Digital Bipolar MicrocircuitsIEEE Transactions on Nuclear Science, 1983