Abstract
Scanning cw laser and electron beams provide an extremely convenient tool for rapidly heating the surface of a semiconductor to a precisely controlled temperature. As a result, they can be used for a variety of semiconductor processing operations, including growth of surface oxides, reduction of Q ss in deposited oxide films, the annealing of ion implanted layers and the improvement of the electrical properties of both metal silicides and deposited silicon films. Experiments performed to explore these processes will be discussed in this paper.

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