A new vertical power MOSFET structure with extremely reduced on-resistance
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (1) , 2-6
- https://doi.org/10.1109/t-ed.1985.21900
Abstract
A new vertical power MOSFET structure called rectangular-grooved MOSFET (RMOS) is proposed, in which the vertical channels are provided along the sidewalls of the rectangular grooves formed by a reactive ion-beam etching (RIBE) technique. The structure is characterized by reduced ON-resistance and high packing density. The relationship between the ON-resistance and the packing density in the new structure is calculated. It is demonstrated that the structure essentially possesses a lower ON-resistance per unit area than VMOS and DMOS structures. Experimental results are also described in detail.Keywords
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