Zur Herstellung und Untersuchung einkristalliner isolierender Substrate für mikroelektronische Zwecke
- 1 January 1973
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 8 (12) , 1439-1451
- https://doi.org/10.1002/crat.19730081212
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Lang Topographic Studies of III-V Heteroepitaxial Films Grown on Sapphire and SpinelJournal of Applied Physics, 1972
- Ätzuntersuchungen an VerneuilspinellenCrystal Research and Technology, 1972
- Silicon-on-Sapphire Epitaxy by Vacuum Sublimation: LEED–Auger Studies and Electronic Properties of the FilmsJournal of Vacuum Science and Technology, 1971
- In-situ-Beobachtungen von Sputtering-Prozessen im ElektronenmikroskopPhysica Status Solidi (a), 1971
- Thin Film GaAs Photocathodes Deposited on Single Crystal Sapphire by a Modified rf Sputtering TechniqueJournal of Vacuum Science and Technology, 1971
- Stress in silicon films deposited heteroepitaxially on insulating substrates with particular reference to corundumJournal of Physics D: Applied Physics, 1970
- The chemical polishing of magnesium aluminate spinel in pyrophosphoric acidMaterials Research Bulletin, 1970
- Physical and Electrical Investigations on Silicon Epitaxial Layers on Sapphire SubstratesJournal of the Electrochemical Society, 1970
- Mechanical and electrical properties of epitaxial silicon films on spinelSolid-State Electronics, 1968
- The Deposition of Silicon on Single-Crystal Spinel SubstratesJournal of the Electrochemical Society, 1968