Electrically tunable g-factors in quantum dot molecular spin states
Abstract
We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different molecular spin states. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.Keywords
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