Resistance Anomaly of Nb–Si Thin Films

Abstract
A resistance anomaly of very thin Nb–Si films is reported. The anomaly is characterized by a sudden drop in the resistance by a factor of ∼103at a temperature (TD) of ∼180Kwithout any application of pressure. The lower resistance-state (∼zero Ω) is constant to 4.2Kso far as we measured.TDdepends on measuring current and on magnetic fields. The anomaly has properties very similar to those of CuCl under high pressure.