Resistance Anomaly of Nb–Si Thin Films
- 1 August 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (8A) , L523
- https://doi.org/10.1143/jjap.22.l523
Abstract
A resistance anomaly of very thin Nb–Si films is reported. The anomaly is characterized by a sudden drop in the resistance by a factor of ∼103at a temperature (TD) of ∼180Kwithout any application of pressure. The lower resistance-state (∼zero Ω) is constant to 4.2Kso far as we measured.TDdepends on measuring current and on magnetic fields. The anomaly has properties very similar to those of CuCl under high pressure.Keywords
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