Numerical simulation of grain boundary effects in Cu(In,Ga)Se2 thin-film solar cells
- 8 December 2004
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 480-481, 8-12
- https://doi.org/10.1016/j.tsf.2004.11.043
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Texture of Cu(In,Ga)Se2thin films and nanoscale cathodoluminescenceJournal of Physics: Condensed Matter, 2003
- Cathodoluminescence of Cu(In,Ga)Se2 thin films used in high-efficiency solar cellsApplied Physics Letters, 2003
- Defects and transport in the wide gap chalcopyrite CuGaSe2Journal of Physics and Chemistry of Solids, 2003
- Fermi level pinning at CdS/Cu(In,Ga)(Se,S)2 interfaces: effect of chalcopyrite alloy compositionJournal of Physics and Chemistry of Solids, 2003
- Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin‐film solar cellsProgress In Photovoltaics, 2003
- Kelvin probe force microscopy for the nano scale characterization of chalcopyrite solar cell materials and devicesThin Solid Films, 2003
- Spectral dependence and Hall effect of persistent photoconductivity in polycrystalline Cu(In,Ga)Se2 thin filmsJournal of Applied Physics, 2002
- Two-Dimensional Simulations of Microcrystalline Silicon Solar CellsSolid State Phenomena, 2001
- Model for electronic transport in Cu(In,Ga)Se2 solar cellsProgress In Photovoltaics, 1998
- Bounds upon grain boundary effects in minority carrier semiconductor devices: A rigorous ‘‘perturbation’’ approach with application to silicon solar cellsJournal of Applied Physics, 1996