Analysis of Fin Lines on Semiconductor Substrate
- 1 October 1984
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 346-351
- https://doi.org/10.1109/euma.1984.333420
Abstract
Finlines formed on metal insulator semiconductor substrate (MIS) is rigorously analyzed using spectral domain approach (SDA). As in the case of printed transmission lines for mono-lithic integrated circuits, three fundamental modes are predicated to exist depending on the operating frequency, resistivity and the thickness of the substrate. The condition for the appearance of each mode is clarified. In particular the slow wave mode is found to propagate within t1he resistivity frequency range suited for monolithic circuit technology. The slow wave factor and attenuation constant are calculated for different operating parameters. The characteristic charts obtained by this analysis could be used to design phase shifter, delay lines. accelerators, tunable filters or integrated antennas with very small sizes.Keywords
This publication has 3 references indexed in Scilit:
- Analysis of Printed Transmission Lines for Monolithic Integrated CircuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1982
- Rigorous analysis of planar MIS transmission linesElectronics Letters, 1981
- Millimeter-Wave Fin-Line CharacteristicsIEEE Transactions on Microwave Theory and Techniques, 1980