Effect of GaAs surface reconstruction on interface state density of epitaxial ZnSe/epitaxial GaAs heterostructures

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Abstract
Epitaxial ZnSe/epitaxial GaAs interfaces have been grown using molecular beam epitaxy and evaluated by capacitance–voltage measurements and transmission electron microscopy. The GaAs surface stoichiometry was systematically varied prior to the nucleation of ZnSe. A significant reduction of interface state density occurred when the GaAs epilayer surface was As deficient. The resulting interface state densities of as-grown structures are comparable to values obtained with (Al,Ga)As/GaAs interfaces.

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