High contrast-ratio electroabsorptive GaInAs/InP quantum well modulator

15 September 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (19) , 1253-1255
https://doi.org/10.1049/el:19880853

Abstract

A clear quantum-confined Stark shift is reported in a 150 quantum-well GaInAs/InP pin diode grown by AP-MOCVD. 4.1 dB modulation (2.6:1 contrast ratio, 4.9 dB insertion loss) is achieved in perpendicular (mesa) geometry at 1.59/μm wavelength in an electric field of ~1.3×10⁵ V cm⁻¹. Growth is on a semi-insulating rather than a p⁺-substrate, to eliminate the effects of free-carrier absorption.

Keywords

PIN DIODE
ELECTROABSORPTIVE TYPE
ATMOSPHERIC PRESSURE MOCVD
MQW
QUANTUM-CONFINED STARK SHIFT
SEMIINSULATING SUBSTRATE
4.9 DB
GAINAS-INP
FABRICATION
INSERTION LOSS
HIGH CONTRAST RATIO
QUANTUM WELL MODULATOR
MESA GEOMETRY
1.59 MICRON