GaAs f.e.t.s with silicon-implanted channels
- 31 March 1977
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 13 (7) , 187-188
- https://doi.org/10.1049/el:19770137
Abstract
Field-effect transistors with channel doping profiles fabricated by the implantation of silicon ions into high-resistivity vapour phase epitaxial GaAs have given noise figures of 2.9 dB with an associated gain of approximately 5 dB at 10 GHz. Similar measurements on F.E.T.S fabricated in an identical manner, except for the channel fabrication, where silicon ions were implanted directly into a Cr-doped semi-insulating GaAs substrate, have resulted in nose figures typically 1 dB higher.Keywords
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