MOCVD growth and ultrafast photoluminescence in GaAs and InAs freestanding quantum whiskers—a review
- 20 February 1994
- journal article
- review article
- Published by Wiley in Microwave and Optical Technology Letters
- Vol. 7 (3) , 94-103
- https://doi.org/10.1002/mop.4650070306
Abstract
No abstract availableKeywords
This publication has 57 references indexed in Scilit:
- Influence of Al content in the barrier on the optical properties of GaAs/As (x=0.1–1) multiple-quantum-well structuresPhysical Review B, 1992
- Temperature and composition dependence of the energy gap in Cd1−xFexSeJournal of Applied Physics, 1991
- Optical Anisotropy in a Quantum-Well-Wire Array with Two-Dimensional Quantum ConfinementPhysical Review Letters, 1989
- Nanostructure fabrication of zero-dimensional quantum dot diodesJournal of Vacuum Science & Technology B, 1988
- GaAs/AlGaAs material modifications induced by focused Ga ion beam implantationJournal of Vacuum Science & Technology B, 1988
- Giant oscillator strength of free excitons in GaAsPhysical Review B, 1987
- Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxesApplied Physics Letters, 1986
- Optical spectroscopy of ultrasmall structures etched from quantum wellsApplied Physics Letters, 1986
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967
- Measurements of the recombination velocity at germanium surfacesPhysica, 1954