Orientation dependent adsorption on a cylindrical silicon crystal: II. Oxygen
- 2 July 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 157 (2-3) , 353-370
- https://doi.org/10.1016/0039-6028(85)90678-8
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Surface dipole and Fermi-level position on clean, oxygen-, and water-covered cylindrical Si crystals: A photoelectron spectroscopy studyPhysical Review B, 1985
- Chemisorption of Atomic Oxygen on Si(100): Self-Consistent Cluster and Slab Model InvestigationsPhysical Review Letters, 1984
- A Monte Carlo study of Si(111) surface oxidationJournal of Vacuum Science & Technology B, 1983
- Oxygen Adsorption on a Cylindrical GaAs Single Crystal Prepared by Molecular Beam EpitaxyPhysica Scripta, 1983
- Structure and reactivity of GaAs surfacesProgress in Surface Science, 1981
- Structures chimique et electronique de l'interface SiO2-SiApplications of Surface Science, 1981
- Oxidation of Si(111), 7×7 and 2×1: A comparisonJournal of Vacuum Science and Technology, 1981
- Theoretical and experimental investigations of the electronic structure of oxygen on siliconJournal of Vacuum Science and Technology, 1979
- Electron orbital energies of oxygen adsorbed on silicon surfaces and of silicon dioxidePhysical Review B, 1974
- Electronic transitions of oxygen adsorbed on clean silicon (111) and (100) surfacesPhysical Review B, 1974