A New Gas Etching Method for Vapor Growth of GaAs
- 1 January 1972
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 11 (1) , 110-111
- https://doi.org/10.1143/jjap.11.110
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate InterfaceJapanese Journal of Applied Physics, 1971
- Ohmic Contacts to Solution-Grown Gallium ArsenideJournal of Applied Physics, 1969
- Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate InterfaceJapanese Journal of Applied Physics, 1968