Simple integrated circuit with Gunn devices

10 February 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (3) , 62-63
https://doi.org/10.1049/el:19720045

Abstract

This letter describes the structure and electrical performance of a simple integrated digital circuit on GaAs using Gunn devices, which is capable of operating at up to 2 Gbit/s. A directed transfer of domain pulses within the circuit, which is almost free of reactive effects, is achieved by employing Schottky-barrier diodes.

Keywords

GUNN DEVICES
SCHOTTKY BARRIER DIODES
ELECTRICAL PERFORMANCE
REACTIVE EFFECTS
DOMAIN PULSES
DIRECTED TRANSFER
INTEGRATED DIGITAL CIRCUIT

This publication has 0 references indexed in Scilit: