Electrical Studies on Annealed D 2 Plasma‐Exposed Silicon

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Abstract
Defects introduced by annealing in plasma‐exposed, boron‐doped silicon have been studied by means of deep level transient spectroscopy (DLTS) and capacitance‐voltage measurements. A hole trap at ( being the edge of the valence band) seen after annealing at 175°C, is tentatively assigned to a defect containing a vacancy. This hole trap anneals out following heat‐treatment at 225°C. Other hole traps at and are observed in the samples following annealing at temperatures higher than 475°C. In the annealing temperature range 325–425°C, an observed broad DLTS band is attributed to complex defect structures in which deuterium atoms are bonded to an as‐yet unidentified defect core. These structures are suggested to differ in the number of deuterium atoms bonded to the core. Each of these structures gives rise to a hole trap(s) in the energy range within the forbidden gap. A nonzero residual DLTS signal seen in all the samples annealed at 525°C or below is proposed to be due to extended defects or platelets, confined to the first few microns region close to the plasma‐exposed surface.

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