Direct Chemisorption Site Selectivity for Molecular Halogens on the Si(111)-Surface
- 19 February 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 76 (8) , 1388-1391
- https://doi.org/10.1103/physrevlett.76.1388
Abstract
Direct chemisorption site preferences within the Si(111)- unit cell are examined for , C, and B. Abstractive chemisorption, which produces a single chemisorbed halide atom, always prefers center adatom adsorption, indicating that the site with the lowest electron density is the more reactive. Dissociative chemisorption, which produces a pair of chemisorbed halide atoms, shows an extreme preference for the closest neighboring pair of center adatoms. The notion of a stepwise direct chemisorption mechanism is upheld by these results.
This publication has 18 references indexed in Scilit:
- Experimental Verification of a New Mechanism for Dissociative Chemisorption: Atom AbstractionPhysical Review Letters, 1995
- First-principles-derived dynamics of F2 reactive scattering on Si(100)-2×1The Journal of Chemical Physics, 1994
- Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopyPhysical Review B, 1989
- Electronic and geometric structure of Si(111)-(7 × 7) and Si(001) surfacesSurface Science, 1987
- Atomic and electronic contributions to Si(111)-(7×7) scanning-tunneling-microscopy imagesPhysical Review B, 1986
- Origin of surface states on Si(111)(7×7)Physical Review Letters, 1986
- Surface Electronic Structure of Si (111)-(7×7) Resolved in Real SpacePhysical Review Letters, 1986
- Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffractionSurface Science, 1985
- Temperature-Dependent Surface States and Transitions of Si(111)-7×7Physical Review Letters, 1983
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983