Low-dose Si ion implantation into semi-insulating LEC GaAs
- 15 October 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (21) , 817-819
- https://doi.org/10.1049/el:19810570
Abstract
Electrical properties of low-dose (1012–1013 cm−2) Si ion implanted n-layers in lightly Cr-doped and undoped semi-insulating GaAs were evaluated by taking into consideration the surface depletion The activation efficiency and residual acceptor-like impurity concentration of implanted layers were investigated.Keywords
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