Performance and Limitations of FETs as Microwave Power Amplifiers

1 January 1973

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 230-232
https://doi.org/10.1109/gmtt.1973.1123166

Abstract

The GaAs FET has excellent potential as a microwave power amplifier and has demonstrated an f/sub t//sup 2/ (PX) product exceeding that of silicon bipolar devices. The design, fabrication, and performance limitations of GaAs power FETs is discussed. Experimental results for a multigate 4 GHz device and a single gate 7 GHz device are presented.

Keywords

MICROWAVE AMPLIFIERS
POWER AMPLIFIERS
GALLIUM ARSENIDE
SILICON
CONDUCTIVITY
MICROWAVE DEVICES
MICROWAVE FETS
CONTACT RESISTANCE
MICROWAVE TRANSISTORS
FABRICATION

This publication has 2 references indexed in Scilit:

Physical limitations on frequency and power parameters of transistors
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
GaAs microwave Schottky-gate FET
Published by Institute of Electrical and Electronics Engineers (IEEE) ,1972