GaAs MMIC Yield Evaluation
- 1 October 1987
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 448-453
- https://doi.org/10.1109/euma.1987.333776
Abstract
The results of a yield evaluation programme are described in which prime yield determining factors affecting MMIC production were examind. This is the first such exercise reported on a major European GaAs foundry. A two-stage reactively matched X-band amplifier and an S-band low noise amplifier have been used as the yield evaluation vehicles. Results will be presented detailing yields obtained at all stages from initial process monitoring to final RF testing.Keywords
This publication has 2 references indexed in Scilit:
- The Development and use of an Ate System for On-Wafer Microwave Characterisation of GaAs MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- A 2 Stage X-Band Low-Noise Amplifier Gallium Arsenide ICPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984