Response of LiF to 1.0–4.0 keV Electrons
- 1 January 1975
- journal article
- research article
- Published by Wolters Kluwer Health in Health Physics
- Vol. 28 (1) , 13-15
- https://doi.org/10.1097/00004032-197501000-00003
Abstract
Extruded LiF chips were irradiated in a scanning electron microscope (SEM) with electron energies of 1.0, 2.0 or 4.0 keV. The LiF chips were irradiated at several electron currents to deliver doses over the range of 5–1200 krads. The average dose, D, over the depth of electron penetration was determined in rads. The thermoluminescence produced by the electrons was compared with that produced by 137Cs gamma-rays. The sensitivity of the LiF to electrons was found to be 0.2–0.4 times its sensitivity to 137Cs gamma-rays. This indicates that thermoluminescence in LiF is produced with remarkable efficiency even at low electron energies provided the electrons reach the LiF.Keywords
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