Thermal stability and Bi diffusion in the implanted AZ111 photoresist
- 1 May 1988
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 32 (1-4) , 419-421
- https://doi.org/10.1016/0168-583x(88)90248-0
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Range distributions and thermal behaviour of Bi implanted into kcl and Al/KCl bilayer structuresNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- High Dose Ion Implantation into PhotoresistJournal of the Electrochemical Society, 1978