GaAs single-drift flat-profile IMPATT diodes for CW operation at D band

5 November 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (23) , 2176-2177
https://doi.org/10.1049/el:19921396

Abstract

Single-drift flat-profile GaAs IMPATT diodes were designed for CW operation in the 140GHz range. The diodes were fabricated from MBE grown material, mounted on diamond heatsinks and tested in a radial line full height waveguide cavity. An RF output power of 15 mW with a corresponding DC to RF conversion efficiency of 1.5 % was obtained at 135.3 GHz

Keywords

CW OPERATION
MM-WAVE TYPE
D BAND
SINGLE-DRIFT FLAT-PROFILE
IMPATT DIODES
1.5 PERCENT
15 MW
DC TO RF CONVERSION EFFICIENCY
EHF
MICROWAVE DEVICE
MBE GROWN MATERIAL
135.3 TO 140 GHZ
DIAMOND HEATSINKS
GAAS
MILLIMETRE-WAVE

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