Stripe-structure dependence of frequency modulation characteristics of AlGaAs lasers

7 November 1985

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 21 (23) , 1088-1090
https://doi.org/10.1049/el:19850773

Abstract

Frequency modulation characteristics of AlGaAs lasers having three kinds of stripe structures, channelled substrate planar (CSP), buried hetero- (BH) and transverse junction stripe (TJS) structures, are investigated. The phase relation between the frequency modulation and modulation current show two types of dependence on the modulation frequency. It is shown that this result is explained well by considering inhomogeneous carrier density distributions in the lateral direction across active layers.

Keywords

STRIPE STRUCTURE DEPENDENCE
CHANNELED SUBSTRATE PLANAR STRIPE STRUCTURES
LATERAL DIRECTION
MODULATION CURRENT
TRANSVERSE JUNCTION STRIPE STRUCTURES
ALGAAS LASERS
FREQUENCY MODULATION CHARACTERISTICS
INHOMOGENEOUS CARRIED DENSITY DISTRIBUTIONS
III-V SEMICONDUCTOR
BURIED HETERO-STRIPE STRUCTURES

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